Office: 211-B Nicholson
Telephone: 2606-Office, 9105-Lab
E-mail:
RESEARCH INTERESTS
Magnetic materials that can be manipulated with the same control as present day electronic materials based on silicon technology are required for future development of spintronics and spin-based version of quantum computing. Spintronics has been coined to refer to devices that make use of not only the charge properties of semiconductors and metals, as in today's transistor based devices, but also of the carriers spin (intrinsic angular momentum). We have focused our research on materials systems that may offer such control. This includes silicon based magnetic semiconductors, germanides, oxides, and sulfides where the carrier concentration and magnetic state can be controlled chemically or with external pressure. In addition, an understanding of the properties of these materials requires exploration of their low temperature properties. Since these materials are typically near metal-insulating and non-magnetic to magnetic phase transitions the physics of quantum phase transitions play a role in determining their low temperature properties.
My research interests include: Magnetic semiconductors, quantum critical behavior in low carrier density materials, magnetoresistive materials and mechanisms of magnetoresistance, and quantum spin systems such as one-dimensional antiferromagnets which can be carrier doped.
CURRENT AND SELECTED PUBLICATIONS
- Guangyoung Xu, C. Broholm, Yeong-Ah Soh, G. Aeppli, J.F. DiTusa, Ying Chen, M. Kenzelmann, C.D. Frost, T. Ito, K. Oka, and H. Takagi, "Mesoscopic Phase Coherence in a Quantum Spin Fluid," Science 317, 5841, 1049-1052 (2007).
- S. Singh, C. Capan, M. Nicklas, M. Rams, A. Gladun, H. Lee, J.F. DiTusa, Z. Fisk, F. Steglich and S. Wirth, "Probing the Quantum Critical Behavior of CeCoIn5 via Hall Effect Measurements," Phys. Rev. Lett. 98, 057001 (2007).
- F.P. Mena, J.F. DiTusa, D. van der Marel, G. Aeppli, D.P. Young, A. Damascelli and J.A. Mydosh, "Suppressed reflectivity due to spin-controlled localization in a magnetic semiconductor," Phys. Rev. B 73, 085205 (2006).
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